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   DSA10I100PM preliminary V = VR 100 Symbol Definition Ratings typ. max. IR V IFAV A VF 0.89 RthJC 4.5 K/W min. 10 VRSM V 200 T = 25°CVJ T = °CVJ 125 mA 2 V = VR 100 T = 25°CVJ I = AF 10 V T = °CC 140 Ptot 35 W T = 25°CC RthCH K/W max. non-repetitive reverse blocking voltage reverse current, drain current forward voltage drop total power dissipation Conditions Unit 1.04 T = 25°CVJ VF0 V 0.45 T = °CVJ 175 rF 16.1 m? V 0.71 T = °CVJ 125 I = AF 10 V 0.87 I = AF 20 I = AF 20 threshold voltage slope resistance for power loss calculation only μA VRRM V 100 max. repetitive reverse blocking voltage T = 25°CVJ CJ 96 junction capacitance V = VR 12 T = 25°Cf = 1 MHz VJ pF IFSM t = 10 ms; (50 Hz), sine; T = 45°CV = 0 VR VJ max. forward surge current T = °CVJ 175 240 A rectangular 0.5d = average forward current thermal resistance junction to case thermal resistance case to heatsink Schottky 100 0.50 IXYS reserves the right to change limits, conditions and dimensions. 20131031a Data according to IEC 60747and per semiconductor unless otherwise specified ? 2013 IXYS all rights reserved |